FinBAR Technology

FinBAR Technology

So far, bulk acoustic wave devices have been realized through 2D patterning of piezoelectric films. We have recently developed a 3D semiconductor-piezoelectric platform that enables extreme miniaturization and integration of the nano-acoustic waveguides for 5G signal processing applications. The new technology relies on the integration of properly textured piezoelectric films on the sidewall of high aspect-ratio fins formed in silicon or germanium.

Fin-Bulk-Acoustic-Resonators (FinBAR) developed through this technology demonstrates exceptional quality factor and electromechanical coupling over the entire SHF regime (3-30 GHz).

Featured Publications:

  1. M. Ramezani, M. Ghatge, and R. Tabrizian, “High kt2.Q Silicon Fin Bulk Acoustic Resonators (FinBAR) for Chip-Scale Multi-Band Spectrum Analysis,” Proc. IEEE International Conference on Micro Electro Mechanical Systems (MEMS ‘18), pp. 158-161, January 2018.
  2. M. Ramezani, M. Ghatge, and R. Tabrizian, “High-Q Silicon Fin Bulk Acoustic Resonators for Signal Processing beyond the UHF,” Proc. IEEE International Electron Device Meeting (IEDM ‘17), p. 40-1, December 2017.